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 PD - 94218A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
16YQ150C
16 Amp, 150V
Major Ratings and Characteristics Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 16Apk, TJ =125C
Description/Features
The 16YQ150C Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel 16YQ150C Units environments. It is packaged in the hermetic isolated TO-257AA ceramic package. The device's forward voltage 16 A drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical 150 V high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality 200 A conformance testing is available on source control drawings to TX, TXV and S levels. 0.87 V * * * * * Hermetically Sealed Ceramic Eyelets Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability * Lightweight
TJ,Tstg Operating and storage -55 to 150
C
CASE STYLE
CATHODE OPEN ANODE
IR Case Style TO-257AA
www.irf.com
1
7/13/01
16YQ150C
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
16YQ150C 150
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 200 A @ tp = 8.3 ms half-sine
Limits
16
Units
A
Conditions
50% duty cycle @ TC = 124 C, square waveform
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop See Fig. 1Q
Limits
1.10 1.36 0.97 1.26 0.87 1.22
Units
V V V V V V mA mA mA pF nH @ 16A @ 32A @ 16A @ 32A @ 16A @ 32A TJ = 25C TJ = 100C TJ = 125C
Conditions
TJ = -55C TJ = 25C TJ = 125C
I RM
Max. Reverse Leakage Current See Fig. 2Q
0.1 3.0 16
VR = rated VR
CT LS
Max. Junction Capacitance Typical Series Inductance
590 9.8
VR = 5VDC ( 1MHz, 25C ) Measured from anode lead to cathode lead 6mm ( 0.025 in.) from package
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size (Typical) Case Style Q Pulse Width < 300s, Duty Cycle < 2% 4.3 150X180 TO-257AA g mils
Limits Units
-55 to 150 -55 to 150 1.25 C C C/W DC operation
Conditions
RthJC Max. Thermal Resistance, Junction
See Fig. 4
2
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16YQ150C
100
10
125C 100C
Reverse Current - I R ( mA )
1
75C
0.1
100
0.01
25C
0.001
0.0001 0 40 80 120 160
Reverse Voltage - VR (V)
Instantaneous Forward Current - I F (A)
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
10
1000
Tj = 25C
Tj = -55C
Junction Capacitance - CT (pF)
Tj = 125C
T J = 25C
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Forward Voltage Drop - V F (V)
100 0 40 80 120 160
Fig. 1 - Max. Forward Voltage Drop Characteristics
Reverse Voltage -VR (V)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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3
16YQ150C
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
180
Allowable Case Temprature - (C)
160 140 120
16YQ150C
R thJC = 1.25C/W
DC
100 80 60 40 20 0 0 10 20 30
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01
4
www.irf.com


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